DETERMINATIVE CHAOS GENERATOR BASED ON BIPOLAR FIELD TRANSISTOR STRUCTURE WITH NEGATIVE DIFFERENTIAL RESISTANCE

Authors

DOI:

https://doi.org/10.31891/2219-9365-2025-82-33

Keywords:

oscillator, deterministic chaos, transistor structure, negative differential resistance, deterministic chaos generator

Abstract

This paper proposes and comprehensively investigates an innovative circuit solution for the implementation of a deterministic chaos generator. The proposed system is based on a bipolar field-effect transistor (BFET) structure featuring negative differential resistance, which enables the generation of chaotic electrical oscillations with extremely short settling times, ranging from 17.25 to 21.28 nanoseconds. Such a short transition to stationary chaotic behavior makes the circuit particularly suitable for high-speed applications in electronics and communication systems.

To support theoretical analysis and practical design, a detailed mathematical model of the chaos generator has been developed using the state variable method. This model takes the form of a system of first-order differential equations and enables precise determination of the output signal frequency as a function of the applied control voltage. Furthermore, the model allows for tracking and analyzing the behavior of the main oscillator components at any location in the circuit and at any moment in time, offering a valuable tool for both theoretical insight and real-time control.

The MATLAB software package was employed to conduct an extensive computer-based study of the circuit’s performance. These simulations examined key parameters and characteristics of the chaotic oscillations, including waveform behavior, spectral content, and system stability under various conditions. The results of the simulation confirmed the effectiveness and robustness of the proposed design in achieving deterministic chaos with well-defined controllability.

Compared to existing analog designs, the proposed deterministic chaos generator demonstrates enhanced load-driving capability and significantly higher operational speed, establishing it as a superior alternative for advanced applications. Potential use cases include secure communications, cryptographic systems, random number generation, and modeling of complex nonlinear phenomena in electronic systems.

Published

2025-05-21

How to Cite

OSADCHUK О., OSADCHUK Я., SKOSHCHUK В., & PETRENKO В. (2025). DETERMINATIVE CHAOS GENERATOR BASED ON BIPOLAR FIELD TRANSISTOR STRUCTURE WITH NEGATIVE DIFFERENTIAL RESISTANCE. MEASURING AND COMPUTING DEVICES IN TECHNOLOGICAL PROCESSES, 82(2), 240–249. https://doi.org/10.31891/2219-9365-2025-82-33